We have studied the surface morphology of metalorganic vapor phase epitaxy grown InAs and InGaAs by atomic force microscopy. InAs monolayer steps were observed on an annealed InAs substrate. Monolayer steps and terraces were also observed on I:he grown InAs homoepitaxial layers. Step edges are smooth and straight on the grown samples. The : growth mode is by step flow. In the case of InGaAs lattice matched to an InP substrate, steps are not as straight as those of InAs layers. This is due to a higher surface concentration gradient near step edges. Two-dimensional islands were observed on the monolayer terraces at a high growth rate of 1.2 nm/s.