The evaluation of a new structure of field emitter arrays which was made to obtain high current density in a stable condition is reported. For improving the stability of emitters by means of the resistive layer, conductive island patterns were formed beneath emitter arrays in each mesh cathode Line. In the structure above, resistance from mesh cathode lines to each emitter is expected to be uniform. As a result of discussions to make the resistance from mesh cathode lines to each emitter uniform, the new structure was made by forming 21X21 Spindt-type emitter arrays in a mesh cathode with an emitter pitch of 5 mu m and with a gate hole diameter of 1.3 mu m. Using a specimen of this structure, a current density of 1.54 A/cm(2) was achieved at a gate voltage of 170 V, which is about 10 times higher than that of the mesh structure with the same resistance and the same number of emitters, 0.13 A/cm(2).