The growth and device characterization of an InGaP/GaAs double-heterojunction bipolar transistor is reported, the device is grown in a solid source molecular beam epitaxy system equipped with a valved phosphorus cracker. Various designs of base-collector (B-C) junction are used to eliminate the current blocking effect caused by the conduction band discontinuity. The results show that a chirped superlattice with a delta-doping layer at the B-C junction has the best de characteristics. Both de and microwave results of these devices are comparable to those obtained with other advanced growth techniques.