We present the characterization of optical proximity effects and their correction in deep-UV lithography using an empirically derived model for calculating feature sizes in resist. The model is based on convolution of the mask pattern with a set of kernels determined from measuring the printed test structures in resist. The fit of the model to the measurement data is reviewed. The model is then used for proximity correction using commercially available proximity correction software. Corrections based on this model is effective in restoring resist linearity and in reducing line-end shortening. It is also more effective in reducing optical proximity effects than corrections based only on aerial image calculations.