We performed a patterning of a stearic acid Langmuir-Blodgett (LB) film on a Si substrate with ultrahigh vacuum scanning probe microscope. The patterning was carried out with a conducting Si cantilever probe by applying positive or negative bias voltages to the sample. When a negative bias (-10 V) was applied, one monolayer of the LB film was extracted. On the other hand, when a positive sample bias (+10 V) was applied, the scanned area was protruded, This extraction mechanism is explained in terms of the force caused by permanent and induced dipole moments. Further, SiO2 was selectively deposited on the patterned area using SiCl4 and H2O.