Complex patterns with 75-125 nm feature sizes exposed with x-ray lithography are shown. Lithographic results for 75-125 nm lines with varying pitch are compared to simulations of image formation and resist dissolution, showing good qualitative agreement. Exposure dose latitude, nested-to-isolated print bias, image shortening, linewidth change with gap, and linearity of printed linewidth versus mask linewidth are quantified for 11-22.5 mu m gaps. Critical dimension control error budgets for resist linewidth uniformity are determined for logic patterns at 75 and 100 nm ground rules. Image shortening is quantified for 75-125 nm ground rule static random access memory-like patterns, indicating hammerheads added to line ends reduce shortening to acceptable levels for greater than or equal to 100 nm ground rules at less than or equal to 17.5 mu m gaps. With tight gap control and tight mask linewidth control, 100 nm ground rule complex patterns can be printed with good latitude using x-ray lithography.