Secondary ion mass spectrometry and spreading resistance profiling techniques have been used to measure dopant profiles and determine electrical activation in ion-implanted samples with effective ion energies as low as 112 eV (i.e., for 0.5 keV BF2). The analytical protocols will be discussed and used to compare the results for samples implanted with ion energies ranging from 0.5 keV (B and BF2) to 8.9 keV (BF2), with and without Ge preamorphization (with and without solid phase epitaxy anneals at 550 degrees C for 30 min), and finally annealed at 750-1050 degrees C for 10 s. Limitations of both analytical techniques for ultrashallow junction characterization and areas where improvements are required are discussed.