Si (100) wafers were boron implanted using an xRLEAP ion implanter at energies of 0.2, 1.0, and 3.0 keV all at a dose of 1 x 10(14) cm(-2). Advanced spreading resistance (SR) measurements were performed on the as-implanted samples to obtain high-resolution profiles of the damaged layer produced during implantation. The measured spreading resistance was highest at, or near, the surface on all samples. The 1.0 and 3.0 keV implants also showed minima in the SR near the substrate. The as-implanted samples were examined with secondary ion mass spectrometry to determine the dopant profile. Forward and reverse Schottky I-V measurements were also done on the same as-implanted samples with a mercury probe. The forward Schottky I-V curves for the 0.2 and 1.0 keV samples showed nonideal Schottky diode behavior. The 3.0 keV sample was similar to that of a good quality Schottky diode and had an ideality factor of 1.28. The reverse Schottky I-V data were processed to obtain the effective dielectric constants for each sample; a neutron transmutation-doped (NTD) wafer was used as a reference. The dielectric constants were 0.77, 1.467, 2.797, and 10.26 for the 0.2, 1.0, and 3.0 keV and NTD samples, respectively.