Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy

Chao KJ; Smith AR; McDonald AJ; Kwong DL; Streetman BG; Shih CK

Journal of Vacuum Science & Technology B, Vol.16, No.1, 453-456, 1998

Chao KJ, Smith AR, McDonald AJ, Kwong DL, Streetman BG, Shih CK

We have used scanning tunneling microscopy and spectroscopy (STM/S) to study multiple pn junctions on cross-sectional surfaces of both Si and GaAs devices. The spectroscopy results indicate that pn junctions can be resolved at the nanometer scale by using the two-dimensional STS technique. STM is also used to identify Zn dopants on GaAs(110) surfaces, A detail dopant location identification method is presented.

Keywords:ATOMIC-FORCE MICROSCOPY;TRANSMISSION ELECTRON-MICROSCOPY;SURFACE POINT-DEFECTS;EXACT CHARGE STATES;GAAS(110) SURFACE;2-DIMENSIONAL DELINEATION;CAPACITANCE MICROSCOPY;N-JUNCTIONS;SPECTROSCOPY;GAAS