Two methods for maskless patterning of SiC using a focused Ga+ beam an demonstrated : the enhancement of the chemical etching rate by amorphization of c-SiC to a-SiC and physical sputtering if deep structures are required. Both methods are followed by wet chemical etching in HF:HNO3 =1:1 at 80 degrees C to remove the remaining a-SiC. Assuming the critical displacement density for amorphization to be about the same as for the onset of etching, the measured depths of the structures were compared with the depths of amorphization estimated with TRIM 87 calculations. To find optimum sputtering parameters the energy dependence of the sputter yield was investigated and compared with TRIM 87 simulations, too. Damage after implantation and after wet chemical etching was investigated by means of Raman spectroscopy. No damaged material remaining after wet chemical etching could be detected.