Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5-10 nm was deposited through the gate opening and annealed at 850 degrees C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 mu A for a 10X 10 FEA. Fowler-Nordheim plots indicated the decrease in work function after silicidation.