The growth of defect-free GaAs/AlAs lambda/4 distributed Bragg reflector (DBR) mirrors on patterned InP-based heterostructures is demonstrated. The optical quality of the regrown mirror was evaluated using reflectivity and photoluminescence measurements and cross-sectional transmission electron microscopy. It was found that defects did not form or propagate during regrowth of the thick BR mirror in the mesa structures. In addition, the postregrowth luminescence from the active region remained unchanged. This technique was applied to the fabrication of an InP-based vertical cavity surface-emitting laser designed for 1.55 mu m emission. This mirror technology enabled the simultaneous formation of a short-stack AlxOy/GaAs DBR mirror and an InAlAs current aperture by the selective wet-oxidation technique.