Single phase ZnSnAs2 grown by molecular beam epitaxy

Seryogin GA; Nikishin SA; Temkin H; Schlaf R; Sharp LI; Wen YC; Parkinson B; Elyukhin VA; Kudriavtsev YA; Mintairov AM; Faleev NN; Baidakova MV

Journal of Vacuum Science & Technology B, Vol.16, No.3, 1456-1458, 1998

Seryogin GA, Nikishin SA, Temkin H, Schlaf R, Sharp LI, Wen YC, Parkinson B, Elyukhin VA, Kudriavtsev YA, Mintairov AM, Faleev NN, Baidakova MV

Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying the substrate temperature and the Sn, As, and Zn fluxes. The best morphology and stoichiometry was obtained at T-s = 300-320 degrees C and the Aux ratio of P-As4/P(Zn )similar to 1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffraction, Raman spectroscopy, and atomic force microscopy. Single phase layers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4 x 10(-4).