The structure and electrical properties of chemical vapor deposited W (CVD-W) films on various physical vapor deposited or metalorganic chemical vapor deposited TN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TiN layers.