Si1 - xGex/Si heterostructures were formed on Si(100) wafers by using single-energy G(e) implantation, double Si+ and Ge+ implantations, or double Ge+ and Ge2+ implantations. Both near surface (hairpin dislocations) and end-of-range (EOR) damage (dislocation loops) were found. At high doses, EOR damage was found beyond the original amorphous/crystalline (a/c) interfaces after annealing. The double implantation processes using low energy and high dose Ge+ implantation to form a compositionally graded SiGe alloy layer, or using a high energy and low dose Si+ or Ge2+ implantation to form a deep amorphous layer, caused a spatial separation between the Ge maximum and ale interface. Subsequent solid phase epitaxy anneals localized the EOR beyond the peak Ge positions. Rutherford backscattering spectroscopy channeling measurements confirm that the double-energy Ge+/Ge2+ method led to the fewest residual defects.