Si0.8Ge0.2 strained epilayers were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition and implanted with boron at 40 keV for a dose of 2.5X10(14) cm(2). Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperatures and time periods were performed for comparison. Results indicate that RTA is better than furnace annealing. The optimum annealing conditions are RTA at 750-850 degrees C for 10 a or at 700 degrees C for 40 - 50 s. At these conditions the implantation induced damage can be removed; the carrier mobility was about 300 cm(2)/V s and the activity was nearly 100%. The experiments also indicate that a Si cap layer can protect the crystals.