A 50 kV Ga+ focused ion beam was applied for milling submicron Pt-(La0.5Sr0.5) CoO3-Pb(NbxZryTiz) O-3- (La0.5Sr0.5)CoO3-Pt-based ferroelectric capacitor heterostructures prepared by pulsed laser and sol-gel deposition techniques. The milling yields were found to be 0.22+/-0.02 mu m(3)/nC for Pb(NbxZryTiz)O-3, 0.3.4+/-0.01 mu m(3)/nC for (La0.5Sr0.5)CoO3, and 0.34 +/- 0.06 mu m(3)/nC for Pt layers. The influence of the ion beam current and its scan strategy, as well as depth of milling, on the quality of fabricated structures was＇ studied. The minimum sizes down to 0.017 mu m(2) for the top electrode, and 0.04 mu m(2) for the capacitor structures milled to the bottom electrode were achieved without an additional sacrificial, layer. A scanning probe microscopy technique was employed to test the properties of the milled capacitor structures.