A design of experiments was used to characterize a metalorganic chemical vapor deposition (MOCVD) TiN production process and hardware. The factors evaluated included pedestal temperature, tetrakis diethylamido titanium (TDEAT) flow, reactor pressure, ammonia flow, and nitrogen purge flow. Responses include density, resistivity, deposition tate, thickness uniformity, step coverage, stress. resistance stability, and particles. All factors studied but the nitrogen purge had some first order effect on the responses investigated. Temperature has the most significant effect on the overall film quality and step coverage. Increasing temperature increases the density and lowers the resistivity of the film while reducing the step coverage: Pressure is a dominant factor and effects all the responses studied. Increasing the pressure serves to improve the film quality and step coverage. Ammonia used at high rates increases the density of: the film while reducing the deposition rate and thickness nonuniformity. The TDEAT flow primarily controls the deposition rate of the system; too high a flow can result in an increase in the resistivity and a drop in film density. Characterization of the CVD TIN process indicated that for the factor ranges studied the center point process is manufacturable and controllable. All of the responses were found to be within acceptable ranges.