Analysis of excitonic absorption properties and their electric field dependence in chemical beam epitaxy-grown InAsP InP multiple quantum wells

Monier C; Serdiukova I; Aguilar L; Newman F; Vilela MF; Freundlich A

Journal of Vacuum Science & Technology B, Vol.17, No.3, 1158-1162, 1999

Monier C, Serdiukova I, Aguilar L, Newman F, Vilela MF, Freundlich A

The oscillator strength of heavy-hole excitons is investigated in InAsxP1-x/InP multiquantum well (MQW) p-i-n structures grown by chemical beam epitaxy, for different arsenic contents (0.26

Keywords:OPTICAL-ABSORPTION;III-V;HETEROSTRUCTURES;MODULATORS;SPECTRA