We report here the electrical properties of As-doped HgCdTe(211)B epilayers grown by molecular beam epitaxy (MBE) using As-4 as the dopant. It is found that though the as-grown As-doped HgCdTe layers are n? type, As can be activated to be a p-type dopant in the HgCdTe(211)B layers after an ex situ annealing process. The AS(4) sticking coefficient on the growing HgCdTe surface is found to decrease from the order of 10(-2)-10(-4) when the substrate temperature is increased from 165 to 175 degrees C. The hole mobility in As-doped HgCdTe is calculated by considering seven major scattering mechanisms: ionized impurity, strain field, polar optical phonon, acoustic phonon, alloy disorder, nonpolar optical phonon, and dislocation scattering. The ionization energies of shallow acceptors related to As in MBE HgCdTe layers with different Cd composition have been obtained by fitting variable temperature Hall measurement results to a two-band nonparabolic Kane model.