We report on the growth of high quality epitaxial FexAl1-x on (In,A1)As/InP with x = 0.45-0.80 and thicknesses up to 1000 Angstrom, and on overgrowth of III-V semiconductor on the metal. Buffer layers of (In,A1)As were grown on InP substrates in a III-V growth chamber, then transferred to an attached ultrahigh vacuum chamber with dual e-beam evaporators, where FexAl1-x layers were grown by co-evaporation. Despite a large lattice mismatch of similar to 1%-2% between the metal and the semiconductor, high quality layers of FexAl1-x with thicknesses of up to 1000 Angstrom were grown. The metal layers showed bright, streaky reflection high-energy electron diffraction patterns, were specular under Nomarski microscopy, and had roughnesses of similar to 1-2 monolayers as measured by atomic force microscopy. High resolution x-ray diffraction showed that even at 1000 Angstrom, the layers were fully strained, and Pendellosung oscillations were observed, indicating high crystalline quality. Metal layers over similar to 200 Angstrom thick had resistivities in the range of those expected of bulk layers (50-100 mu Omega cm). Reflectivities greater than 90% for lambda = 4-20 mu m were observed for metal layers 1000 A thick. Overgrowth of (In,Ga)As and (In,A1)As on the metal layers shows a marked sensitivity to As overpressure, possibly due to an In surface-riding layer on top of the metal.