Proximity effect correction (PEC) by the SCALPEL GHOST method, using a scattering stencil mask in which mask-scattered electrons are used as a correction beam, is discussed and anew correction dose adjustment method is proposed. We simulate electron scattering in order to trace electron trajectories in the Si membrane and obtain exiting angular distribution by using a Monte Carlo method. We found that the GHOST can be used for a PEC using a Si scattering stencil mask of about 0.3-2 mu m thickness under a 100 kV accelerating voltage. In the SCALPEL technique, the correction dose is adjusted by changing the radius of the annular aperture size for different mask conditions and for various under-layer conditions. In the method proposed, the vertical position of an additional correction dose adjustment aperture is shifted. The angular range becomes narrow as the aperture shifts so that the electron transmission determining the correction dose can be corrected in the doublet optics. This method can also be applied to the membrane mask.