The electrode structures of Pt(130 nm)/Ru(80 nm) were integrated on polysilicon by metalorganic chemical-vapor deposition. It was found that the ruthenium buffer layer plays an important role in preventing the oxidation of polysilicon during annealing at 700 degrees C in oxygen (760 Torr). The microstructure and conductivity of the platinum bottom electrodes depended greatly on the annealing conditions of the ruthenium buffer layer. The surface morphology and the conductivity of Pt/Ru (annealed at 700 degrees C in a vacuum) films annealed at 700 degrees C in oxygen were superior to those of Pt/Ru (annealed at 500 degrees C in a vacuum) films annealed. under the same conditions. The electrode structures suggested here may be applied to the integration of ferroelectric thin films.