The phenomenon of dopant dose loss through trapping at the Si-SiO2 interface has. important consequences for metal-oxide-semiconductor device fabrication. It represents also a challenge to analytical techniques, since the trapped dopants appear to exist in one or a few monolayers thickness at the interface. In this work, we report on a complementary approach, using both electrical device data and accurate process modeling, as well as analytical dopant profiling with secondary ion mass spectroscopy, to investigate important features of the phenomenon, such as dose dependence, detrapping, and transient enhanced diffusion effects. This approach enabled the development of dose loss models suitable for design of current and future complementary metal-oxide-semiconductor technologies.