We have investigated effects of atomic dynamics for ultra-low-energy As and B ion implants using a highly efficient molecular dynamics scheme. We simulated ion implantation by molecular dynamics simulation using the recoil ion approximation method and the local damage accumulation model proposed in the article. The Local damage accumulation probability function consists of. deposited energy in a unit cell, implant dose rare, target material, projectile atom, and the history of the recoil event in a cell. The results of simulations agree with the experimental results. The MDRANGE results considering no damage were different from the tail region. Using the local damage: accumulation model and the recoil ion approximation method, we simulated dopant two-dimensional profiles and two-dimensional damage profiles.