Tn this article, we report our progress in two-dimensional (2D) dopant profiling of metal-oxide-semiconductor field effect transistor devices fabricated with 0.2 mu m technology by using dopant selective etching followed with atomic force microscope imaging (DSE/AFM). By comparing device simulation results based on our measurement with electrical measurement results, we have found that in these small devices the depletion region can have a significant effect on the results of dopant concentration conversions from the selective etching data, and the necessary correction can be found by a. proper estimation of the depletion width. Here we discuss the factors that affect the etching reproducibility and reliability and show our approaches to these challenges, Our results show Chat DSE/AFM is a useful technique far 2D dopant profiling with certain advantages if it is dealt with properly.