Materials Research Bulletin, Vol.32, No.8, 1109-1117, 1997
Switching Properties of V1-Xtixo2 Thin-Films Deposited from Alkoxides
TiO2-doped vanadium dioxide films have been deposited from vanadium oxo-alkoxide solutions. VO2 thin films of good optical quality are obtained after heating at 500 degrees C under a reducing atmosphere. These films exhibit highly reversible electrical and optical switching around 70 degrees C. A hysteresis phenomenon is observed, but V1-xTixO2 films do not exhibit the same behavior as other doped VO2 films. The width of the hysteresis curve decreases as soon as Ti is added to the VO2 film. Best switching characteristics are obtained with Ti approximate to 5%. Evidence of the coexistence of two phases around the transition temperature is presented.