Hole conductivity values as a function of temperature and iodine pressure in compact and adherent PbI2 film grown on Ag-doped Pb have been estimated from the isothermal parabolic rate constants through a tarnishing study where Mott＇s parabolic law of film growth is valid. Iodide films have been grown inside a specially designed iodination reactor in the temperature and iodine pressure ranges of 423-523 K and 0.615-6.578 kPa, respectively. Estimated hole conductivity values have been found to follow a pressure dependence relation of the type sigma(h.) = sigma(h.) (0)[p(I-2)](1/2) with an associated activation energy value of 84 kJ.mol(-1). The iodide film has been characterized by scanning electron microscopy and X-ray diffraction analyses.