In the present investigation, ultrathin oxides of silicon (<250 Angstrom) were grown on p-type (100) oriented monocrystalline silicon, employing a low-temperature wet oxidation technique. The effect of furnace temperature (600 and 700 degrees C), water vapor pressure (0.3-1.0 atm), and oxidation time (15-180 min) on the rate of oxide growth was studied. The oxidation rates observed in the present investigation were fitted to the theoretical model proposed by da Silva and Stosic (Semicond. Sci. Technol. 12, 1038, 1997).