Several polymeric electroluminescent (EL) devices, possessing the poly(p-phenylenevinylene) (PPV) and polyimide LB films used as the light emitting layer and the hole transporting layer respectively, were fabricated by the LB technique. In these heterostructural EL devices, the luminance over 100 cd/m(2) was achieved, which was more than 10 times higher than that of the single layer (PPV LB film only) device. Furthermore, by incorporation of the hole transporting layer to the EL devices, remarkable improvements in charge injection and EL efficiency were observed. These improvements could be controlled by varying the thickness of the hole transporting layer.