Novel positive resists of poly(methylphenyl methacrylate) and poly(methylphenyl methacylate)-co-(methyl methacrylate) were synthesized and their performance as electron beam resists was evaluated, initially with spin-cast films and then with Langmuir-Blodgett(LB) films on silicon substrate, for optimum sensitivity and resolution. The fine patterns were formed at the dose range of 250-350 mu C/cm(2), and developed in the solution made of various ratio of MIBK/IPA mixture. The best resolution was 80 nm for the PMPMA resist and 0.14 mu m for the P(MPMA-MMA) resist.