Chemical vapor transport by gas (CVTG) is a new method to grow semi-conductor thin films, transparent conductors and hence solar cell structures economically. This technique can be divided into (1) reactive CVTG (RCVTG), and (2) condensation CVTG (CCVTG). In the present study CuInSe2 film is formed by RCVTG and a CdS film is deposited by CCVTG to form solar cell structures like Mo/CIS/CdS/SnO2. Electroless deposited Ctl-ln alloy, the precursor, was subjected to selenization at 500 degrees C by an RCVTG method to produce the CIS film. The CdS film is deposited by CCVTG. Initial results show promising cell parameters for CVTG deposited CIS based solar cell structures. Detailed studies are in progress to characterize the influence of CVTG deposited CIS and CdS film properties on cell efficiency and other cell parameters.