Single-crystalline silicon solar cell with pp(+) heterojunction of c-Si substrate and mu c-Si:H film

Nishida M; Shindo T; Komatsu Y; Okamoto S; Kaneiwa M; Nanmori T

Solar Energy Materials and Solar Cells, Vol.48, No.1, 131-136, 1997

DOI10.1016/S0927-0248(97)00082-2 Export Citation

Single-crystalline silicon solar cell with pp(+) heterojunction of c-Si substrate and mu c-Si:H film

Nishida M, Shindo T, Komatsu Y, Okamoto S, Kaneiwa M, Nanmori T

Annealing effects of the single-crystalline silicon solar cells with hydrogenated microcrystalline silicon (mu c-Si:H) film were studied to improve the conversion efficiency. Boron-doped (p(+)) mu c-Si:H film was deposited in a RF plasma enhanced chemical vapor deposition system (RF plasma CVD) on the rear surface of the cell. With the optimized annealing conditions for the substrate, the conversion efficiency of 21.4% (AM1.5, 25 degrees C, 100 mW/cm(2)) was obtained for 5 x 5 cm(2) area single crystalline-solar cell.