We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm x 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.