The electrical conductivity, light-induced ESR (LESR) and constant photocurrent method (CPM) measurements were performed on a-Si:H films which had been high-temperature-annealed (HTA) and on those which had been light-soaked (LS) at room temperature. The results were compared for HTA and LS samples with similar levels of the neutral dangling bond density, It is found from the electrical measurements that LS samples exhibit more prominent decrease in the electrical conductivity, suggesting a change in the network structure besides the creation of neutral dangling bonds. It is also found from the LESR and CPM measurements for HTA and LS samples that the ratio of the density of neutral dangling bonds to that of charged ones is increased more prominently by light soaking than by high-temperature annealing.