We have studied the fabrication of amorphous silicon (a-Si:H) p-i-n solar cells using an ion shower doped n(+)-layer. The p-i-n cells with ion-doped n(+)-layer exhibited open-circuit voltage of > 0.8 V, fill factor of > 0.62 and conversion efficiency of > 8.4% when the ion acceleration voltage was between 3 and 7 kV. The a-Si:H p-i-n solar cell fabricated under an optimized ion-doping condition exhibited an open-circuit voltage of 0.84 V, a fill factor of 0.66 and a conversion efficiency of 9.9% which was very similar to those of conventional a-Si:H p-i-n cells fabricated in the same deposition chamber. Therefore, ion shower doping technique can be applied to fabricate large area, high performance a-Si:H p-i-n solar cells.