Influence of annealing temperature on the properties of Cu(In,Ga)Se-2 thin films by thermal crystallization in Se vapor

Yamaguchi T; Yamamoto Y; Tanaka T; Tanahashi N; Yoshida A

Solar Energy Materials and Solar Cells, Vol.50, No.1, 1-6, 1998

DOI10.1016/S0927-0248(97)00091-3 Export Citation

Influence of annealing temperature on the properties of Cu(In,Ga)Se-2 thin films by thermal crystallization in Se vapor

Yamaguchi T, Yamamoto Y, Tanaka T, Tanahashi N, Yoshida A

Thermal crystallization of amorphous - like Cu(In,Ga)Se-2 precursors was attempted in a Se atmosphere in the temperature range from 200 degrees C to 600 degrees C. Thin films crystallized over 400 degrees C had a single phase Cu(In,Ga)Se, with chalcopyrite structure, while those crystallized at less than 300 degrees C were composed of CuSe2 and Cu7Se4. Grain size in Cu(In,Ga)Se-2 thin films increased with increasing annealing temperature, specifically 2-3 mu m in Cu(In,Ga)Se-2 ([Ga]/([In] + [Ga]) = 0.66) thin films crystallized at 600 degrees C.

Keywords:SOLAR-CELLS