CuGa0.5In0.5Se2 thin films were prepared by spray pyrolysis technique at substrate temperatures (T-s) in the range 100-400 degrees C. The films prepared at T-s = 300-350 degrees C were nearly stoichiometric, polycrystalline with a strong preferred (112) orientation. The resistivity of the films varied in the range, 50-1000 Omega cm and the evaluated optical band gap was 1.35 eV.