Growth of CuGaxIn1-xSe2 single crystals by THM (traveling heater method) has been investigated. On the basis of the relation between the composition x of grown crystal CuGaxIn1-xSe2 and y of CuGayIn1-ySe2 solute in 60 mol% In solution, THM growth of CuGaxIn1-xSe2 (x = 0, 0.2, 0.4, 0.7, 1) was performed using a zone ingot which was prepared in advance. Bulk single crystals with 10 mm in diameter and 20-30 mm in length have been obtained by the THM growth, and their electrical and optical properties have been studied.