A method is described for the fabrication of low-resistivity molybdenum films on soda-lime glass substrates. Films have been deposited using a DC magnetron sputtering system with a S-gun configuration, and have been characterized through X-ray diffraction, electrical conductivity, and Hall mobility measurements. The influence of the deposition parameters on both the resistivity of the Mo and on the contact resistivity of the Mo/CuInSe2/Mo structure has been studied. Values of resistivity ranging from 1.2 x 10(-5) to 36 x 10(-5) Omega cm and of contact resistivity ranging from 0.025 to 0.15 Omega cm(2) were found.