In the present paper, the authors discuss the application of amorphous p-i-n solar cells containing i-layers which are deposited at high substrate temperatures as top cells in amorphous silicon/microcrystalline silicon tandem ("micromorph") solar cells. Increasing the substrate temperature for the deposition of intrinsic a-Si:H results in a reduced optical gap. The optical absorption is enhanced and thereby the current generation. A high-current generation within a relatively thin amorphous top cell is very interesting in the context of micromorph tandem cells, where the amorphous top cell should contribute a current of at least 13 mA/cm(2) for a total cell current density of 26 mA/cm(2). A detailed study of the intrinsic material deposited by VHF-GD at 70 MHz at substrate temperatures between 220 degrees C and 360 degrees C is presented, including samples deposited from hydrogen-diluted silane plasmas. The stability of the films against light soaking is investigated employing the mu(0) tau(0) parameter, which has been shown to be directly correlated to the cell performance. The paper discusses in detail the technological problems arising from the insertion of i-layers deposited at high substrate temperatures into solar cells. These problems are specially pronounced in the case of cells in the p-i-n (superstrate) structure. The authors demonstrate that an appropriate interface layer at the p/i-interface can largely reduce the detrimental effects of i-layer deposition at high temperatures. Finally, the application of such optimized high-temperature amorphous cells as top cells in micromorph tandem cells is discussed. Current densities of 13 mA/cm(2) in the top cell are available with a top cell i-layer thickness of only 250 nm.