Thin film p-ZnCuTe semiconductors were synthesized by electrodeposition. The deposition mechanism was investigated by cyclic voltammetry; formation of the ternary compound, having the cubic structure of ZnTe, was obtained upon annealing at 400 degrees C, as confirmed by X-ray diffraction. A direct energy gap of 1.7 eV was determined by optical absorption experiments. Measurements of the Hall effect and Van der Pauw conductivity showed an increase of carrier concentration and a decrease of sheet resistance for ZnCuTe with respect to zinc telluride.