A method is described for coating thin optically transparent conducting films of CuI (p-type semiconductor of band gap similar to 3.1 eV) on glass. The dependence of the sheet resistance of the film on the level of iodine doping and other characteristics of the film are described. A minimum sheet resistance 25 Ohm/square (for a film of thickness similar to 10 mu m) was obtained through an optimization of iodine doping, sintering time and temperature.