In this paper we report on Raman and XPS characterization of vanadium oxide thin films deposited by RF-sputtering. The samples were deposited by using a vanadium target in different oxygen fluxes, so that the stoichiometry (O/V ratio) of the oxide was varied. Several physical parameters of the films indicate a strong structural difference between the sample deposited at lower oxygen flux (1 scc m) and those obtained with higher flux (from 1.25 to 9 scc m). The increase of OV ratio corresponds to a lower crystallinity of the thin films as indicated by the initial lowering and the final disappearance of the characteristic Raman mode of V2O5 (crystal) at about 140 cm(-1). For the highest flux samples new broad bands develop, typical of amorphous materials, both in polarized as well as in depolarized Raman spectra.