Solar Energy Materials and Solar Cells, Vol.58, No.4, 387-397, 1999
Investigation of the M/a-Si : H/c-Si structure as a Schottky contact with a diffusion barrier layer
The electrical and photoelectrical characteristics of the a-Si:H/c-Si (p-type) structure are measured. The structure is analysed as a Schottky diode in which the a-Si: H is considered as a diffusion barrier layer. The conventional h.f. C-V theory is simplified and adapted to the analysis, which allows to estimate the initial band bending at the c-Si interface, the built-in electric field in the a-Si:H layer and the differential density of the a-Si:H/c-Si interface states.