In this paper we report in detail on the effect of current injection in amorphous silicon solar cells. A set of devices has been degraded and then annealed at different current intensities. Device performances during the whole experiment have been monitored by current-voltage characteristics and quantum efficiency curves. It has been found that annealing rate increases with current intensity, while stabilized photovoltaic parameters decrease. Time evolution of efficiency and short-circuit current during degradation has been reproduced by a numerical device modeling, resulting in a pronounced increase of defects near the p-i interface. The model also demonstrated that annealing results are not well reproduced if current-induced annealing is not energy selective.