The CuInTe2 thin films is one of the most attractive semiconductors for solar cells applications, since its direct band gap energy (Eg approximate to 1 eV) is suitable as an absorber in photovoltaic conversion. In this letter the CuInTe2 thin films are prepared by flash evaporation technique. X-ray diffraction measurements on the as-deposited CuInTe2 film showed that these films consist mainly of the chalcopyrite phase. The junction formation in the n-CdS/p-CuInTe2 cell has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements.