Germanium diffusion in p-type PbTe (p = 8 x 10(17)-2.6 x 10(18) cm(-3)) was investigated by sputtered neutrals mass-spectrometry (SNMS) and layer-by-layer X-ray analysis at temperatures T = 853-973 K. The problem of optimization of annealing conditions for diffusion study was discussed. From the temperature dependence of the germanium diffusion coefficient (D-Ge) activation energy was calculated (E-A = 1.4 +/- 0.1 eV). It was found that D-Ge is proportional to hole concentration. The vacancy mechanism is likely predominant.