Solid State Ionics, Vol.110, No.1-2, 95-101, 1998
Defect structure of quenched gamma-BINIVOX
The defect structure of gamma-Bi2V0.9Ni0.1O5.35 (BINIVOX, x = 0.10) quenched from high temperature has been refined using X-ray and neutron powder diffraction data. The defect structure shows that oxide ion vacancies are exclusive to the equatorial positions around the Ni/V atom. Consideration of site occupancies, inter-site contact distances, and geometrical constraints yields two likely coordination environments for V/Ni, i.e. distorted tetrahedral and distorted octahedral. The percentage of V/Ni sites that are distorted tetrahedra may be calculated as 68% with the remainder as distorted octahedra.
Keywords:LOW-TEMPERATURE FORM;RIETVELD REFINEMENT;CRYSTAL-STRUCTURE;DIFFRACTION DATA;BIMEVOX SERIES;CONDUCTIVITY;FAMILY;CONDUCTORS;BI4V2O11;BICUVOX