Thin films of crystalline V2O5 were deposited by reactive rf magnetron sputtering from a metallic vanadium target in argon-oxygen gas mixtures at a substrate temperature of 300 degrees C. We found that the orientation direction of V2O5 films could be controlled by changing the oxygen flow ratio. Cyclicvoltammetry measurements for these films revealed that lithium diffused much faster in the a-axis oriented V2O5 film than the b-axis oriented one. The surface morphology of these samples was also observed, however, there was not much difference between them, i.e.; lithium ion diffusion was not dominated by the porosity of the film in this case. We also found that chemical diffusion coefficient of Li along the a-axis of V2O5 was larger than along the b-axis, hence, the lithium ion diffusion in V2O5 film was attributed to the diffusing direction.